Read e-book online Advanced Nano- and Piezoelectric Materials and Their PDF

By Ivan A. Parinov

ISBN-10: 1633212394

ISBN-13: 9781633212398

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Under low temperatures the speed of process is determined by the velocity of heterogeneous nucleation and by chemical reaction kinetics. The quality of the pyrolitic films is considerably affected by the carrier gas composition and cleaning efficiency [89]. The main ways to lower the temperature of dielectric passivated films deposition within the pyrolitic method are the following: (i) using reactions with a low activation force and, obviously, reactive components under relatively low temperatures; Development and Study of Silicon Dioxide Nanostructured Films … 43 (ii) preliminary thermal activation of molecules beyond a deposition zone; (iii) non-thermal activation (chemical one using the catalyst addition and physical one under the effect of ionic and electric beams, electric field, light, namely UV or infrared-radiation).

Distribution of electrons in energies in the oxide is similar to the distribution of photons in the spectrum of the radiation source. 4 eV). Then O 2 metastable molecule dissociates: O 2 + hv  O + O  (> 1 eV) [24]. Part of molecular oxygen, which has reached the interface, reacts with silicon according the Deal-Grove model [33]. Development and Study of Silicon Dioxide Nanostructured Films … 27 Figure 4. Schematic presentation of oxidation reaction [24]. Thus, the oxidation reaction of silicon is represented by five fluxes: (1) F1 is the oxidant flux from the gas phase to the surface of silicon: F1 = h(C*  C0), (2) where h is the transition coefficient from the gas phase, C* is the oxidant concentration on the outer surface of the oxide, C0 is the equilibrium concentration of the oxidant in the oxide.

The atomic oxygen is formed by dissociation of the adsorbed ozone molecules on the hot substrate surface. 22 eV [24]), and with rising temperature a usual thermal oxidation reaction starts to prevail. If we use other gases as additives to the oxygen atmosphere, it is important to consider their dissociation processes that, in some cases have a rapid character [31]. Light flux, passing through the oxidant atmosphere, reaches Si  SiO2 system, where part of the radiation is absorbed, that leads to heating up the silicon substrate [3, 25].

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Advanced Nano- and Piezoelectric Materials and Their Applications by Ivan A. Parinov


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